Samsung’s archrival becomes the first chipmaker to launch 300+ layers of TLC NAND flash memory; SK Hynix’s 321-layer 1-terabit TLC paves the way for more affordable 100TB+ SSDs
- SK Hynix’s 321-layer NAND targets AI-driven data storage needs
- 321-layer NAND flash improves data transfer speed by 12%
- AI storage requirements are driving innovation in high-capacity NAND solutions
Samsung and SK Hynix have continued their head-to-head battle in the NAND flash memory market, with the latter taking the lead with a new launch.
SK Hynix, the world’s second-largest memory chipmaker, recently became the first to mass-produce triple-level cell (TLC) NAND flash with more than 300 layers.
The company’s new 321-layer, 1-terabit TLC 4D NAND flash, recently announced, will revolutionize the data storage industry and pave the way for more affordable ultra-high-capacity solid-state drives (SSDs) with a capacity of more than 100 TB.
SK Hynix 321-layer NAND
The NAND industry is rushing to push the boundaries of data storage technology, and SK Hynix’s achievement is a major milestone.
After launching the 238-layer NAND flash last year, SK Hynix’s latest 321-layer NAND flash sets a new industry standard. The company plans to deliver these chips to customers from the first half of 2025, targeting the booming artificial intelligence (AI) market that requires high-performance, energy-efficient storage solutions.
The 321-layer NAND was made possible by SK Hynix’s “Three Plugs” process technology, in which three plugs are electrically connected through an optimized follow-up step, significantly improving the speed, energy efficiency and overall performance of the chips.
SK Hynix also developed a low-tension material and introduced technology that automatically corrects the alignment between the plugs to further optimize the production process.
The 321-layer product offers a 12% increase in data transfer speed and a 13% improvement in read performance compared to the previous 238-layer NAND. In addition, it reduces power consumption by more than 10%. With a 59% productivity improvement, SK Hynix’s new NAND provides an improved storage solution for AI data centers and AI applications on devices.
Although SK Hynix has achieved this historic feat, its main competitor, Samsung, is not far behind. Samsung is reportedly working on a 400-layer NAND flash chip, which it plans to release in 2026.
The company’s roadmap includes the development of bonding vertical NAND technology (BV NAND), which will enable even greater storage density and minimal heat build-up. Samsung’s long-term goal is to introduce NAND chips with more than 1,000 layers by 2030, potentially breaking the 200TB storage barrier for AI-powered SSDs.
“SK Hynix is on track to grow into the Full Stack Al Memory Provider by adding a perfect portfolio in the ultra-high performance NAND space on top of the DRAM business led by HBM,” said Jungdal Choi, Head of NAND Development at SK Hynix. .
Via KEDGlobal