NAND-based storage devices are a hotly contested sector, one in which Samsung has led since 2002, but its rivals are gaining ground.
The South Korean electronics giant has announced plans to begin mass production of its latest ninth-generation 290-layer vertical (V9) NAND chips, aimed at AI and cloud devices, as well as large-scale enterprise servers. These use Samsung’s double-stack technology, instead of the triple-stack method typically used.
However, other companies are getting closer. SK Hynix, the world’s second-largest memory chipmaker and Samsung’s archrival, plans to launch its 321-layer NAND technology early next year, while Chinese flash memory specialist Yangtze Memory Technologies says it plans to do so later years to introduce 300-layer chips.
A game of chicken
As the battle heats up, Samsung is already looking beyond its upcoming V9 launch, with industry insiders indicating that a stunning 430-layer tenth-generation (V10) NAND chip is expected to be unveiled next year. Unlike the V9, this one will use Samsung’s triple-stack technology.
The aggressive push for NAND supremacy comes as demand for high-performance, large-capacity storage devices grows in the AI era. High-density NAND chips answer this demand while improving the capabilities of 5G smartphones.
The Korean Economic Journal says the major chip makers are now “embroiled in a game of chicken in a race to develop advanced chip stacking technology to reduce costs and improve performance.” It points out that Samsung has previously announced plans to do this developing more than 1000 layers of NAND chips by 2030.